A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI
نویسندگان
چکیده
This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with differential cascode as core structure. first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while subsequent stages increase gain. Moreover, utilizes baluns input/output interstage impedance matching. Switch capacitances are added switch operating bands LNA, which cover 17–38 GHz overall. Measurement results show that proposed achieves gain (S21) 23.0 dB figure (NF) 4.0 dB.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11193255